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| PD- 93761 IRF7807D1 FETKYTM MOSFET / SCHOTTKY DIODE * Co-Pack N-channel HEXFET(R) Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETKYTM family of Co-Pack HEXFET(R)MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain or Source Current (VGS 4.5V) Pulsed Drain Current Power Dissipation Schottky and Body Diode Average ForwardCurrent 25C 70C 25C 70C TJ, TSTG IF (AV) 25C 70C IDM PD Symbol VDS VGS ID Max. 30 12 8.3 6.6 66 2.5 1.6 3.5 2.2 -55 to 150 C W A A Units V A/S A/S A/S G 1 8 K/D K/D K/D K/D D 2 7 3 6 4 5 SO-8 Top View Device Features (Max Values) IRF7807D1 VDS RDS(on) Qg Qsw Qoss 30V 25m 14nC 5.2nC 18.4nC Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient RJA Max. 50 Units C/W www.irf.com 1 11/8/99 IRF7807D1 Electrical Characteristics Parameter Drain-to-Source Breakdown Voltage* Static Drain-Source on Resistance* Drain-Source Leakage Current* V(BR)DSS RDS(on) 1.0 90 7.2 Min 30 Typ Max Units V Conditions VGS = 0V, ID = 250A VGS = 4.5V, ID = 7A VDS = VGS,ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125C VGS = +/-12V VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A 17 25 m V A mA Gate Threshold Voltage* VGS(th) IDSS Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) Output Charge* Gate Resistance IGSS Qgsync Qgcont Qgs1 Qgs2 Qgd QSW Qoss Rg 10.5 12 2.1 0.76 2.9 3.66 15.3 1.2 +/- 100 14 17 nA nC 5.2 18.4 VDS = 16V, VGS = 0 Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time * Min VSD trr Qrr ton Typ Max 0.5 0.39 51 48 Units Conditions V Tj = 25C, Is = 1A, VGS =0V Tj = 125C, Is = 1A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D1 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP 100 VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP ID , Drain-to-Source Current ( A ) ID, Drain-to-Source Current (A) 10 2.5V 10 2.5V 380s PULSE WIDTH Tj = 25C 1 0.1 1 10 1 0.1 380s PULSE WIDTH Tj = 150C 1 10 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 60 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 70 60 VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) 50 50 40 30 20 10 0 40 30 20 0.0V 10 380s PULSE WIDTH Tj = 25C 0 0 0.2 0.4 0.6 0.8 1 380S PULSE WIDTH 0.0V Tj = 150C 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) VSD, Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics Fig 4. Typical Reverse Output Characteristics www.irf.com 3 IRF7807D1 2000 1600 VGS, Gate-to-Source Voltage (V) VGS = Ciss = Crss = Coss = 0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd 6.0 ID= 7.0A VDS = 16V C, Capacitance (pF) 4.0 1200 Ciss 800 Coss 2.0 400 Crss 0 1 10 100 0.0 0 2 4 6 8 10 12 VDS , Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2.0 RDS(on) , Drain-to-Source On Resistance ID = 7.0A 100 ID, Drain-to-Source Current ( A) VGS = 4.5V T J = 25C T J = 150C 1.5 (Normalized) 10 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 1 2.5 VDS = 10V 380s PULSE WIDTH 3.0 3.5 T J , Junction Temperature ( C ) VGS, Gate-to-Source Voltage (V) Fig 7. Normalized On-Resistance Vs. Temperature Fig 8. Typical Transfer Characteristics 4 www.irf.com IRF7807D1 RDS(on) , Drain-to -Source On Resistance ( ) R DS (on) , Drain-to-Source On Resistance ) ( 0.05 0.024 0.04 0.022 VGS = 4.5V 0.020 0.03 0.02 ID = 7.0A VGS = 10V 0.018 0.01 2.0 4.0 6.0 8.0 10.0 0.016 0 20 40 60 80 VGS, Gate -to -Source Voltage (V) I D , Drain Current (A) Fig 9. On-Resistance Vs. Gate Voltage Fig 10. On-Resistance Vs. Drain Current 100 Thermal Response (Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 1 P DM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 10 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (HEXFET(R) MOSFET) www.irf.com 5 IRF7807D1 MOSFET , Body Diode & Schottky Diode Characteristics 100 100 10 Reverse Current - I R ( mA ) Tj = 150C 1 125C 100C Tj = 125C Tj = 25C 0.1 75C 50C 25C Instantaneous Forward Current - I F ( A ) 10 0.01 0.001 0.0001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) 1 Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V F ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D1 SO-8 Package Details SO-8 Part Marking www.irf.com 7 IRF7807D1 SO-8 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com |
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